![Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17 Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/5.0069567&id=images/medium/5.0069567.figures.online.highlight_f1.jpg)
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials
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Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers | SpringerLink
![Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide](http://cpb.iphy.ac.cn/article/2017/1916/cpb_26_12_124210/cpb_26_12_124210_f1.jpg)
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide
![Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/00703bd1e201b1a2ca88682cd73053ad0b81c7cf/1-Figure1-1.png)